研究方向：

高性能纳电子器件

教育背景：

2015.09-2020.6 武汉大学 凝聚态物理 博士

2010.09-2014.06 武汉大学 物理学类 学士

工作履历：

2020年至今 365英国上市

学术兼职：

奖励与荣誉：

学术成果、科研项目：

1、主持2022年国家青年基金-高性能黑磷光控忆阻器界面优化及光突触仿生研究

2、主持2022年武汉市知识创新专项曙光计划-二维MoS2/WS2范德瓦尔斯异质结忆阻器光突触研究

3、主持2020年英国365网站校基金-SiO2纳米颗粒提高黑磷场效应晶体管稳定性的研制

学术成果：

1. Jiang, B., Zou, X., ... & Liao, L. (2018). Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors. Advanced Functional Materials, 28(26), 1801398.

2. Jiang, B., Yang, Z., Liu, X., Liu, Y., & Liao, L. (2019). Interface engineering for two-dimensional semiconductor transistors. Nano Today

3. Jiang, B.,... & Liao, L. Enhanced Air Stability of Black Phosphorus Field Effect Transistors via Surface Engineering. Applied Physics Letters, 2020, 117(11): 111602.

4. Yang, Zhenyu; Jiang, Bei*; …;Wan, D.*; Zou, X.; Liu, X.; Liao, L.; Shan, F.*, Applied Physics Letters 2020, 116 (14), 141101.

5. Facai Wu,…,Bei Jiang*, Cong Ye*, IEEE Transactions on Electron Devices, 2022, 69,1:375-379

6. Shanwu Ke,…, Bei Jiang*, Brain-like synaptic memristor based on lithium-doped silicate for neuromorphic computing, Front. Phys. 17(5), 53508 (2022)

7. Lin Jun, … , Jiang Bei*, Li Guoli, Zou Xuming, Yu Ting, Liao Lei, Liu Xingqiang, Ultra-High Gain Hot-Electron Tunneling Transistor Approaching the Collection Limit, SCIENCE CHINA Information Sciences, 2022, ISSN 1674-733X

8. Xiao, Y., Wu, X., Jin, Y., Cao, G., Jiang Bei*, Ke, S., & Ye, C. (2022). Improved artificial synapse performance of Pt/HfO2/BiFeO3/HfO2/TiN memristor through N2 annealing. Ceramics International.

9. X. Zhang, … , Jiang Bei* et al., The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory, IEEE Transactions on Electron Devices, vol. 69, no. 10, pp. 5644-5648.