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郭喆

作者:   来源:365英国上市      发布日期:2023-03-24   浏览:

姓名:郭喆 职称:特任副研究员

办公地址:365英国上市911

邮箱:1017572159@qq.com

研究方向:铁电、自旋电子器件及其在前沿领域的应用如人工智能、感存算一体等

 

教育经历:

2012.9-2018.3 华中科技大学 光学与电子信息学院 博士 导师:杨晓非(教授)

2008.9-2012.6   东南大学   吴健雄学院      学士 专业:电子科学与技术

 

工作经历:

2018.4-2023.2 华中科技大学 光学与电子信息学院 博士后 合作导师:游龙(教授)

2023.3-至今 英国365网站 特任副研究员

 

发表论文(一作/共一、通讯):

1、Kaifeng Dong; Zhe Guo*; YiYi Jiao; Ruofan Li; Chao Sun; Ying Tao;Shuai Zhang; Jeongmin Hong; and Long You*; Field-Free Current-Induced Switching of L10-FePt Using Interlayer Exchange Coupling for Neuromorphic Computing, Physical Review Applied, 2023, 19(024034).

2、Zhe Guo#; Ruofan Li#; Shuai Zhang; Yufeng Tian; Jeongmin Hong; Long You*; A three-dimensional magnetic field sensor based on a single spin-orbit-torque device via domain nucleation, Applied Physics Letters, 120, 23 : 232404 (2022).

3、Yaodong Guan#; Zhe Guo#; Long You*; Ferroelectric-nanogap based steep-slope ambipolar transistor, Small, 2203017, (2022). (封底文章)

4、Ruofan Li#; Min Song#; Zhe Guo#; Shihao Li#; Wei Duan; Shuai Zhang; Yufeng Tian; Zhenjiang Chen; Yi Bao; Jingsong Cui; Yan Xu; Yaoyuan Wang; Wei Tong; Zhe Yuan; Yan Cui; Li Xi; Dan Feng; Xiaofei Yang; Xuecheng Zou; Jeongmin Hong; Long You*; In-memory mathematical operations with spin-orbit torque devices, Advanced Science, 2202478 (2022).

5、Zhe Guo#; Yaodong Guan#; Qiang Luo; Jeongmin Hong; Long You*; Ferroelectric Nanocrack Switches for Memory and Complementary Logic with Zero Off-current and Low Operating Voltage, Advanced Electronic Materials, 2100023 (2021). (封底文章)

6、Zhe Guo; Qiang Luo; Houbing Huang; Shuai Zhang; Xiaoming Shi; Fei Sun; Yanzhou Ji; Qiming Zou; Min Song; Xiaofei Yang; Deyang Chen; Jeongmin Hong; Long-Qing Chen; Long You*; Low-energy complementary ferroelectric-nanocrack logic, Nano Energy, 75, 104871 (2020).

7、Huiming Chen#; Min Song#; Zhe Guo#; Ruofan Li; Qiming Zou; Shijiang Luo; Shuai Zhang; Qiang Luo;Jeongmin Hong; Long You*; Highly Secure Physically Unclonable Cryptographic Primitives Based on Interfacial Magnetic Anisotropy, Nano Letters. 18: 7211-7216 (2018).

8、Qiang Luo#;Zhe Guo#; Houbing Huang; Qiming Zou; Xiangwei Jiang; Shuai Zhang; Hongjuan Wang; Min Song;Bao Zhang; Hong Chen; Haoshuang Gu; Genquan Han; Xiaofei Yang; Xuecheng Zou; Kai-You Wang; Zhiqi Liu; Jeongmin Hong; Ramamoorthy Ramesh; Long You*; Nanoelectromechanical switches by controlled switchable cracking, IEEE Electron Device Letters, 47(7):1209-1213 (2019).

9、Zhe Guo; Xiaofei Yang; Xiangli Liu; Jun Ou-Yang; Benpeng Zhu;Shi Chen;Yue Zhang*; Electric field induced non-90° rotation of the easy axis of a ferromagnetic film, Applied Physics Letters, 112: 052904 (2018).

10、Zhe Guo; Xiaofei Yang; Baiqian Yan;Jun Ou-Yang; Benpeng Zhu;Shi Chen;Yue Zhang*; Electric field-induced multi-jump magnetic switching, Journal of Alloys and Compounds, 703: 431-436 (2017).

11、Zhe Guo; Xiaofei Yang; Jiefang Deng; Baiqian Yan; Juanjuan Zheng; JinjunDing; Jiapu Li; Benpeng Zhu; Shi Chen; Jun Ou-Yang; Yue Zhang*; Electric field control of the exchange spring effect in perpendicularly magnetized FePt/NiFe bilayers, Journal of Alloys and Compounds, 687: 204-210 (2016).

注:#共同一作

 

承担科研项目:

1、国家自然科学基金委员会,青年基金项目,61904060,非破坏性读出的铁电互补逻辑机制研究及器件制作,2020-012022-1223万元,结题,主持

2、中国博士后科学基金会,第14批特别资助(站中),2021T140228,可逆铁电纳米裂纹实现的超低功耗晶体管原型器件制作及机理研究,2021-032022-0318万元,结题,主持

3、中国博士后科学基金会,第65批面上资助,2019M652642,铁电基纳米裂纹实现的非破坏性读出互补逻辑器件,2019-032020-03, 8万元,结题,主持

 

授权发明专利:

1、游龙,郭喆,罗强,洪正敏. 基于可控纳米裂纹器件实现的互补电阻开关器件及其控制方法.专利号:201910139216.9

2、游龙,罗强,郭喆,洪正敏. 一种基于可控纳米裂纹的器件及其制备方法和控制方法. 专利号:201810133187.0

3 游龙; 李若凡; 郭喆; 张帅 ; 基于FePt材料的磁化翻转器件、无外磁场翻转方法及应用, 2023-01-28, 专利号:202110695410.2

 

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