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马国坤

作者:   来源:365英国上市      发布日期:2018-10-15   浏览:

姓名: 马国坤        职称:副教授

EMAIL:guokunma@163.com

办公地址:物电大楼1117室

通讯地址:武昌区友谊大道368号

 

研究方向:

神经形态器件与类脑芯片

存算一体算法与电路设计

高密度信息存储器件与集成

先进三维集成

教育背景:

2010 四川大学 学士

2015 剑桥大学卡文迪许实验室(University of Cambridge, Cavendish Laboratory) 联合培养

2016 电子科技大学 博士

工作履历:

017 2019 英国365网站物电学院 讲师

2017,2018 台湾中山大学 访问学者

2019 至今 365英国上市 副教授

学术兼职:

AFM,IEEE EDL/TED, APL,ACS AMI, AEM等期刊审稿人

奖励与荣誉:

获湖北省“楚天学子”称号 

学术成果、科研项目:

       主持和参与多项国家自然科学基金项目,团队近年在IEEE EDL/TEDAPLAEM等微电子领域顶级期刊发表研究论文30余篇,申请国家发明专利30余项。坚持前沿基础研究与解决先进工程问题双导向,主持国家自然基金项目、湖北省科技重大专项、企业委托项目10余项,与长江存储、武汉新芯等企业开展深入合作,育人导向正确,发展态势良好。毕业员工在长江存储、武汉新芯、新思科技等半导体行业龙头企业从事芯片设计、制造、失效分析等工作。指导多名员工于北京大学、复旦大学、武汉大学、华中科技大学、电子科技大学、中国科学院大学等著名高校和研究所继续深造

代表性成果:

[1] CHEN A, FU Y, MA G*, et al. The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping [J]. IEEE Electron Device Letters, 2022, 43(6): 870-3.

[2] MA G, YANG Z, CHEN A, et al. Improved Selectivity and Reliability in NbOₓ-Based Selector by Co-Approaches of Al Doping and Ta Interlayer [J]. IEEE Electron Device Letters, 2022, 43(9): 1444-6.

[3] CHEN A, ZHANG Z, MA G*, et al. Comprehensive Regulation of the Threshold Oscillation for Neuromorphic Systems Based on Cryogenic Performance of NbO₂ Device [J]. IEEE Electron Device Letters, 2021, 42(5): 692-5.

[4] MA G*, HE Y, LIU C, et al. Realization of Storage and Synaptic Simulation Behaviors Based on Different Forming Modes [J]. IEEE Electron Device Letters, 2019, 40(8): 1257-60.

[5] CHEN A, HE Y, MA G*, et al. Improved uniformity and threshold voltage in NbOx-ZrO2 selectors [J]. Applied Physics Letters, 2021, 119(7).

[6] CHEN A, MA G*, ZHANG Z, et al. MultiFunctional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer [J]. Advanced Electronic Materials, 2019, 6(1)

[7] YANG G, CHEN A, LIU N, et al. Realization of Outstanding Stable 1S1R Behavior Based on Al-Doped NbOx [J]. IEEE Transactions on Electron Devices, 2023, 70(1): 65-9.

[8] ZHAO X, CHEN A, JI J, et al. Ultrahigh Uniformity and Stability in NbOx-Based Selector for 3-D Memory by Using Ru Electrode [J]. IEEE Transactions on Electron Devices, 2021, 68(5): 2255-9.

[9] ZHANG Z, CHEN A, MA G*, et al. Controllable Functional Layer and Temperature-Dependent Characteristic in Niobium Oxide Insulator–Metal Transition Selector [J]. IEEE Transactions on Electron Devices, 2020, 67(7): 2771-7.

[10] HE Y, MA G*, CAI H, et al. Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices [J]. IEEE Transactions on Electron Devices, 2019, 66(1): 619-24.

[11] BAMAO A, XIA Y, MA G*, et al. Realization of memristor and synaptic simulation behaviors based on LiNbOx [J]. Ceramics International, 2023, 49(6): 10083-8.

[12] LIN Z, SU J, WANG Y, et al. Atomic-scale investigation on endurance mechanism of the GeTex-based OTS device by Si doping [J]. Vacuum, 2023, 213.

[13] ZHANG P, MA G*, XIONG Z, et al. Studying of threshold switching behavior based on programmable metallization cells selector by KMC method [J]. Vacuum, 2023, 218.

[14] YU Z-Y, ZHAO J-Y, MA G-K, et al. High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications [J]. Rare Metals, 2022, 41(11): 3671-6.

[15] CHEN D, CHEN A, YU Z, et al. Forming-free, ultra-high on-state current, and self-compliance selector based on titanium-doped NbOx thin films [J]. Ceramics International, 2021, 47(16): 22677-82.

   [16]LIU N, YANG G, HE Y, et al. Realization of Synapse Behaviors Based on Memristor and Simulation Study With KMC Method [J].IEEE Journal of the Electron Devices Society, 2020, 8: 981-5.



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